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| New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) () 0.037 at VGS = 10 V 0.046 at VGS = 4.5 V 0.040 at VGS = - 10 V 0.050 at VGS = - 4.5 V TO-252-4L D-PAK D Top View Drain Connected to Tab FEATURES ID (A)a Qg (Typ.) 8 8 -8 -8 26 * TrenchFET(R) Power MOSFET * 100 % UIS Tested RoHS COMPLIANT APPLICATIONS 25.5 * Backlight Inverter for LCD Display * Full Bridge DC/DC Converter D G1 G2 S1 G1 S2 G 2 S1 N-Channel MOSFET S2 P-Channel MOSFET Ordering Information: SUD50NP04-77P-T4-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current (10 s Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 C TA = 25 C IDM IS ISM IAS EAS ID 8 Symbol VDS VGS 8a 8 a a, b, c b, c N-Channel 40 20 P-Channel - 40 - 8a - 8a - 8a, b, c - 7.4b, c - 30 8a - 4.6b, c - 30 15 11.25 24 15.3 5.6b, c 3.6b, c Unit V 7 30 8a A 4.3b, c 30 7 2.45 10.8 6.9 5.2b, c 3.3b, c - 55 to 150 mJ W C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t 10 s Steady State Symbol RthJA RthJC Typ. 20 9.4 Max. 24 11.5 P-Channel Typ. 18 4.3 Max. 22 5.2 Unit C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 s. d. Maximum under Steady State conditions is 60 C/W (N-Channel) and 52 C/W (P-Channel). Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 1 New Product SUD50NP04-77P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 A VGS = 0 V, ID = - 250 A ID = 250 A ID = - 250 A ID = 250 A ID = - 250 A VDS = VGS, ID = 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 C VDS = - 40 V, VGS = 0 V, TJ = 55 C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VDS = - 5 V, VGS = - 10 V VGS = 10 V, ID = 5 A Drain-Source On-State Resistanceb rDS(on) VGS = - 10 V, ID = - 5 A VGS = 4.5 V, ID = 4 A VGS = - 4.5 V, ID = - 4 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 5 A Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 5 A N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A f = 1 MHz N-Ch N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 640 1555 73 176 41 142 11.7 38.5 5.3 17 1.9 4.2 1.7 7.0 2.2 3.0 20 60 9.0 27 nC pF gfs VDS = 15 V, ID = 5 A VDS = - 15 V, ID = - 5 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 - 10 0.0305 0.030 0.037 0.036 22 20 0.037 0.040 0.046 0.050 S 1.4 - 1.4 40 - 40 44 - 41 - 5.5 4.3 2.5 - 2.7 100 - 100 1 -1 10 - 10 A A V nA mV/C V Symbol Test Conditions Min. Typ.a Max. Unit www.vishay.com 2 Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamic a Symbol Test Conditions N-Ch N-Channel VDD = 20 V, RL = 4 ID 5 A, VGEN = 10 V, Rg = 1 P-Channel VDD = - 20 V, RL = 4 ID - 5 A, VGEN = - 10 V, Rg = 1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 20 V, RL = 4 ID 5 A, VGEN = 4.5 V, Rg = 1 P-Channel VDD = - 20 V, RL = 4 ID - 5 A, VGEN = - 4.5 V, Rg = 1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS = 2 A IS = - 2 A N-Ch P-Ch N-Ch P-Ch N-Channel IF = 2 A, di/dt = 100 A/s, TJ = 25 C P-Channel IF = - 2 A, di/dt = - 100 A/s, TJ = 25 C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ.a 9 10 11 14 14 36 8 10 18 47 14 60 14 35 10 13 Max. 18 20 20 25 25 60 16 20 30 80 25 110 25 60 20 25 8 -8 30 - 30 Unit Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time td(on) tr td(off) tf td(on) tr td(off) tf ns IS ISM VSD trr Qrr ta tb TC = 25 C A 0.805 - 0.76 19 22 14 22 13 15 6 7 1.2 - 1.2 30 40 25 40 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 3 New Product SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 VGS = 10 thru 5 V 4V 24 I D - Drain Current (A) I D - Drain Current (A) 4 5 18 3 TC = 25 C 2 12 6 3V 0 0.0 1 TC = 125 C 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 TC = - 55 C 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.060 800 Transfer Characteristics Ciss r DS(on) - On-Resistance () 0.052 C - Capacitance (pF) 640 0.044 VGS = 4.5 V 0.036 VGS = 10 V 0.028 480 320 Coss 160 Crss 0 6 12 18 24 30 0.020 0 6 12 18 24 30 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 5 A VGS - Gate-to-Source Voltage (V) 8 r DS(on) - On-Resistance VDS = 20 V 6 VDS = 30 V 4 VDS = 10 V 1.8 ID = 5 A 1.6 Capacitance VGS = 10 V 1.4 (Normalized) VGS = 4.5 V 1.2 1.0 2 0.8 0 0.0 2.5 5.0 7.5 10.0 12.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 TJ = 150 C r DS(on) - On-Resistance () 10 I S - Source Current (A) TJ = 25 C 1 0.16 0.20 ID = 5 A 0.12 0.1 0.08 TA = 125 C 0.04 TA = 25 C 0.01 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 100 On-Resistance vs. Gate-to-Source Voltage 0.2 V GS(th) Variance (V) ID = 5 mA ID = 250 A 80 0.0 Power (W) - 25 0 25 50 75 100 125 150 60 - 0.2 40 - 0.4 20 - 0.6 - 0.8 - 50 0 0.0001 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (C) Threshold Voltage 100 100 Single Pulse Power, Junction-to-Ambient 80 10 I D - Drain Current (A) Power (W) Limited by rDS(on)* 100 s 1 1 ms 10 ms 100 ms 0.1 10 s DC TA = 25 C Single Pulse 60 40 20 0 0.0001 0.001 0.01 Time (s) 0.1 1 0.01 0.01 0.1 1 10 100 Single Pulse Power, Junction-to-Case VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 5 New Product SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 7 Limited by rDS(on)* 10 I D - Drain Current (A) 100 s I D - Drain Current (A) 5 4 1 1 ms 10 ms 100 ms, DC 3 0.1 TC = 25 C Single Pulse 0.01 0.01 1 0 0.1 1 10 100 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (C) Safe Operating Area, Junction-to-Case 15 2.5 Current Derating**, Junction-to-Ambient 12 I D - Drain Current (A) 2.0 6 Power (W) 75 100 125 150 9 Package Limited 1.5 1.0 3 0.5 0 0 25 50 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Current Derating**, Junction-to-Case 15 Power Derating, Junction-to-Ambient 12 Power (W) 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Power Derating, Junction-to-Case www.vishay.com 6 ** The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = Notes: 2. Per Unit Base = RthJA = 60 C/W t1 t2 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 7 New Product SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 VGS = 10 thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 4 5 18 3 TJ = 25 C 2 12 3V 6 1 TJ = 125 C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 TJ = - 55 C 0.8 1.6 2.4 3.2 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.050 2500 Transfer Characteristics r DS(on) - On-Resistance () 0.044 VGS = 4.5 V C - Capacitance (pF) 2000 Ciss 1500 0.038 0.032 VGS = 10 V 0.026 1000 Coss 500 Crss 0.020 0 6 12 18 24 30 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 5 A VGS - Gate-to-Source Voltage (V) 8 r DS(on) - On-Resistance VDS = 20 V 6 VDS = 30 V 4 VDS = 10 V 1.8 ID = 5 A 1.6 Capacitance VGS = 10 V 1.4 (Normalized) VGS = 4.5 V 1.2 1.0 2 0.8 0 0 8 16 24 32 40 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.12 ID = 5 A r DS(on) - On-Resistance () 0.09 I S - Source Current (A) TJ = 150 C 10 TJ = 25 C 0.06 TA = 125 C 0.03 TA = 25 C 1 0.0 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.7 120 On-Resistance vs. Gate-to-Source Voltage 0.5 V GS(th) Variance (V) ID = 250 A 0.3 ID = 5 mA 0.1 Power (W) 96 72 48 - 0.1 24 - 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 100 TJ - Temperature (C) Threshold Voltage 120 100 Single Pulse Power, Junction-to-Ambient 96 10 I D - Drain Current (A) Power (W) 72 Limited by rDS(on)* 1 1 ms 10 ms 100 ms 1s 48 24 0.1 TA = 25 C Single Pulse 10 s DC 0 0. 00 1 0.01 0.1 Time (s) 1 10 0.01 0.01 0.1 1 10 100 Single Pulse Power, Junction-to-Case VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 9 New Product SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 7 Limited by rDS(on)* 10 I D - Drain Current (A) 100 s 1 ms 10 ms 100 ms DC I D - Drain Current (A) 6 4 1 3 0.1 TC = 25 C Single Pulse 0.01 0.01 1 0 0.1 1 10 100 0 25 50 75 100 125 150 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (C) Safe Operating Area, Junction-to-Case 22 3.5 Current Derating**, Junction-to-Ambient 18 I D - Drain Current (A) 2.8 Package Limited 9 Power (W) 13 2.1 1.4 4 0.7 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 175 TC - Case Temperature (C) TA - Ambient Temperature (C) Current Derating**, Junction-to-Case 35 Power Derating, Junction-to-Ambient 28 Power (W) 21 14 7 ** The power dissipation PD is based on TJ(max) = 150 C, using 0 0 25 50 75 100 125 150 175 junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 TC - Case Temperature (C) Power Derating, Junction-to-Case www.vishay.com 10 New Product SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 52 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73989. Document Number: 73989 S-80109-Rev. B, 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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